? 2011 ixys corporation, all rights reserved ds99920b(03/11) v dss = 1000v i d25 = 12a r ds(on) 1.05 t rr 300ns n-channel enhancement mode avalanche rated fast intrinsic rectifier symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 24 a i ar t c = 25 c6a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 463 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65/2.5..14.6 n/lb. weight to-247 6 g plus220 types 4 g IXFH12N100P ixfv12n100p ixfv12n100ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 20 a t j = 125 c 1.0 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1.05 polar tm hiperfet tm power mosfets features z low r ds(on) and q g z avalanche rated z low package inductance z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls plus220 (ixfv) g d s d (tab) plus220smd (ixfv_s) g s g = gate d = drain s = source tab = drain to-247 (ixfh) d (tab) g s d d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFH12N100P ixfv12n100p ixfv12n100ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 4.8 8.8 s r gi gate input resistance 1.9 c iss 4080 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 246 pf c rss 40 pf t d(on) 30 ns t r 25 ns t d(off) 60 ns t f 36 ns q g(on) 80 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 24 nc q gd 35 nc r thjc 0.27 c/w r thcs (to-247&plus220) 0.25 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 0.8 c i rm 7.9 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. i f = 6a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) plus220 outline plus220smd outline e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2011 ixys corporation, all rights reserved IXFH12N100P ixfv12n100p ixfv12n100ps fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 0123456789101112 v ds - volts i d - amperes v gs = 10v 8v 5v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 6a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 12a i d = 6a fig. 5. r ds(on) normalized to i d = 6a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 1012141618202224 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH12N100P ixfv12n100p ixfv12n100ps ixys ref: f_12n100p(75-744)4-01-08-a fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 500v i d = 6a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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